A. E. Bormontov: search on Z-Library

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1

Structure and Properties of Self-Organized 2D and 3D Antimony/Carbon Composites

Kulikova, T. V., Tuchin, A. V., Averin, A. A., Testov, D. A., Bityutskaya, L. A., Bormontov, E. N.

Journal:

Technical Physics

Year:

2018

Language:

english

File:

PDF, 1022 KB

english, 2018

2

Enhanced Generation of Interface States in MIS IC Elements under the Action of UV and X-ray Radiations

M. N. Levin, E. N. Bormontov, O.V. Volkov, S. S. Ostroukhov, A. V. Tatarintsev

Journal:

Russian Microelectronics

Year:

2001

Language:

english

File:

PDF, 44 KB

english, 2001

3

Vibrational spectrum and electronic structure of C60-fullerene in an external electric field

Tuchin, Andrei V., Bityutskaya, Larisa A., Bormontov, Eugene N.

Journal:

The European Physical Journal D / Atomic, Molecular, Optical and Plasma Physics

Year:

2015

Language:

english

File:

PDF, 981 KB

english, 2015

4

Ring voltage controlled oscillator for high-speed PLL systems

Bistritskii, S. A., Klyukin, V. I., Bormontov, E. N.

Journal:

Russian Microelectronics

Year:

2014

Language:

english

File:

PDF, 205 KB

english, 2014

5

Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects

Eugeny N. Bormontov, Mark N. Levin, Roman S. Nakhmanson

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 475 KB

english, 2000

6

Tunnel-fluctuation model of the MIS admittance

E.N. Bormontov, S.V. Lukin, R.S. Nakhmanson

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 954 KB

english, 1999

7

Investigation of interfacial states in MIS structures by a single-frequency admittance method

E. N. Bormontov, S. V. Lukin

Journal:

Technical Physics

Year:

1997

Language:

english

File:

PDF, 92 KB

english, 1997

8

Transient spectroscopy of surface states in a constant subthreshold current mode for MIS transistors

M. N. Levin, E. N. Bormontov, A. V. Tatarintsev, V. R. Gitlin

Journal:

Technical Physics

Year:

1999

Language:

english

File:

PDF, 72 KB

english, 1999

9

Functional properties of silicon/non-native-oxide heterostructures

E. A. Tutov, S. V. Ryabtsev, E. N. Bormontov

Journal:

Technical Physics Letters

Year:

1997

Language:

english

File:

PDF, 61 KB

english, 1997

10

Rapid monitoring of the charging properties of ion-doped MOS structures

E. N. Bormontov, S. N. Borisov, V. P. Lezhenin, S. V. Lukin

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 43 KB

english, 2000

11

Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters

E. N. Bormontov, M. N. Levin, S. A. Vyalykh, S. N. Borisov

Journal:

Technical Physics

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

12

Charge distribution in a MIS insulator from spectral characteristics of photoemission current

M. N. Levin, E. N. Bormontov, O. V. Volkov, S. S. Ostroukhov, A. V. Tatarintsev

Journal:

Technical Physics

Year:

2001

Language:

english

File:

PDF, 78 KB

english, 2001

13

Adsorption-based porosimetry using capacitance measurements

E. A. Tutov, A. Yu. Andryukov, E. N. Bormontov

Journal:

Year:

2001

Language:

english

File:

PDF, 52 KB

english, 2001

14

Interaction of metal nanoparticles with a semiconductor in surface-doped gas sensors

S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, A. V. Ivanov

Journal:

Year:

2001

Language:

english

File:

PDF, 59 KB

english, 2001

15

An analytical model of the diffusion redistribution of ion-implanted impurity in the gate region of a MOS transistor

E. N. Bormontov, Yu. I. Bryazgunov, V. P. Lezhenin

Journal:

Technical Physics Letters

Year:

2003

Language:

english

File:

PDF, 56 KB

english, 2003

16

Influence of water vapor adsorption on theC-Vcharacteristics of heterostructures containing porous silicon

E. A. Tutov, E. N. Bormontov, V. M. Kashkarov, M. N. Pavlenko, É. P. Domashevskaya

Journal:

Technical Physics

Year:

2003

Language:

english

File:

PDF, 176 KB

english, 2003

17

The effect of irradiation on the characteristics of MOS transistors

E. N. Bormontov, M. N. Levin, V. R. Gitlin, T. G. Men’shikova, A. A. Tatarintsev

Journal:

Technical Physics Letters

Year:

2004

Language:

english

File:

PDF, 59 KB

english, 2004

18

A noncontact method to study the charge state of the semiconductor-insulator interface

V. V. Kryachko, M. N. Levin, A. V. Tatarintsev, E. N. Bormontov

Journal:

Technical Physics

Year:

2004

Language:

english

File:

PDF, 171 KB

english, 2004

19

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

V. A. Terekhov, A. N. Man’ko, E. N. Bormontov, V. N. Levchenko, S. Yu. Trebunskikh, E. A. Tutov, É. P. Domashevskaya

Journal:

Year:

2004

Language:

english

File:

PDF, 65 KB

english, 2004

20

MIS structure with polyamide insulator under the conditions of water vapor sorption

E. A. Tutov, E. N. Bormontov, M. N. Pavlenko, G. A. Netesova, E. E. Tutov

Journal:

Technical Physics

Year:

2005

Language:

english

File:

PDF, 61 KB

english, 2005

21

Statistical method of deep-level transient spectroscopy in semiconductors

E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, V. G. Zadorozhniy

Journal:

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

22

Silicon MOS structures with nonstoichiometric metal-oxide semiconductors

E. A. Tutov, S. V. Ryabtsev, E. E. Tutov, E. N. Bormontov

Journal:

Technical Physics

Year:

2006

Language:

english

File:

PDF, 182 KB

english, 2006

23

Equilibrium and nonequilibrium electrode processes on porous silicon

E. A. Tutov, M. N. Pavlenko, E. E. Tutov, I. V. Protasova, E. N. Bormontov

Journal:

Technical Physics Letters

Year:

2006

Language:

english

File:

PDF, 170 KB

english, 2006

24

Fluctuation model of the capacitance-voltage characteristic of MDS structure

T. G. Men’shikova, A. E. Bormontov

Journal:

Technical Physics Letters

Year:

2010

Language:

english

File:

PDF, 164 KB

english, 2010

25

Method for evaluating the parameters of radiation defects and predicting the radiation resistance of MOS transistors

M. N. Levin, E. V. Bondarenko, A. E. Bormontov, A. V. Tatarintsev, V. R. Gitlin

Journal:

Technical Physics Letters

Year:

2010

Language:

english

File:

PDF, 166 KB

english, 2010

26

Relaxation spectroscopy of deep levels in semiconductors: Laplace-DLTS method

M. N. Levin, A. E. Bormontov, A. É. Akhkubekov, E. A. Tatokhin

Journal:

Technical Physics Letters

Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

27

Oscillations of the band gap of single-walled carbon nanotubes in the range of very small diameters

E. N. Bormontov, A. A. Ganin, L. A. Bityutskaya

Journal:

Year:

2012

Language:

english

File:

PDF, 239 KB

english, 2012

28

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

V. V. Filippov, E. N. Bormontov

Journal:

Year:

2013

Language:

english

File:

PDF, 392 KB

english, 2013

29

Modeling of Electronic Properties of Strained Silicon on a Germanium Substrate

Filippov, V. V., Vlasov, А. N., Bormontov, Е. N.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 439 KB

english, 2014

30

[IEEE 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2014.6.30-2014.7.4)] 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Phase-locked loop embedded in 5578TC024 FPGA

Bystritsly, Sergey A., Klyukin, Vladimir I., Bormontov, Eugene N.

Year:

2014

Language:

english

File:

PDF, 582 KB

english, 2014

31

Quadratic stark effect in the fullerene C60at low symmetry orientation in the field

A. V. Tuchin,L. A. Bityutskaya,E. N. Bormontov

Journal:

Physics of the Solid State

Year:

2014

Language:

english

File:

PDF, 406 KB

english, 2014

32

A finite-length capped single-walled carbon nanotube (5, 5) under an applied electric field

Tuchin, A V, Nestrugina, A V, Bityutskaya, L A, Bormontov, E N

Journal:

Journal of Physics Conference Series

Year:

2014

File:

PDF, 1.16 MB

2014

33

A finite-length capped single-walled carbon nanotube (5, 5) under an applied electric field

Tuchin, A V, Nestrugina, A V, Bityutskaya, L A, Bormontov, E N

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 1.16 MB

english, 2014

34

SPIE Proceedings [SPIE International Conference on Micro-and Nano-Electronics 2012 - Zvenlgorod, Russian Federation (Monday 1 October 2012)] International Conference Micro- and Nano-Electronics 2012 - Ionization energy oscillations in metallic and semiconducting nanotubes of ultra small diameters

Bormontov, Eugeniy N., Ganin, Alexander A., Bityutskaya, Larissa A., Orlikovsky, Alexander A.

Year:

2013

Language:

english

File:

PDF, 659 KB

english, 2013

35

A Fiber-Optic pH Sensor for Microbioreactors

Lores, C. E. Angarita, Bogatikov, E. V., Bormontov, E. N.

Journal:

Technical Physics Letters

Year:

2020

File:

PDF, 332 KB

2020